P-CHANNEL MOSFET. NTE2372 Datasheet

NTE2372 MOSFET. Datasheet pdf. Equivalent

Part NTE2372
Description P-CHANNEL MOSFET
Feature NTE2372 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Swit.
Manufacture NTE
Datasheet
Download NTE2372 Datasheet




NTE2372
NTE2372
MOSFET
P–Ch, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
D TO220 Case Style
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20
Inductive Current, Clamp, ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. ISD 3.5A, di/dt 95A/µs, VDD V(BR)DSS, TJ +150°C
Note 3. Pules Width 300µs, Duty Cycle 2%.



NTE2372
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
V(BR)DSS
V(BR)DSS
TJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 1.5A, Note 3
VDS = VGS, ID = 250µA
200 – – V
0.22 V/°C
– – 1.5
2.0 4.0 V
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
gfs
IDSS
IGSS
IGSS
VDS = 50V, ID = 1.5A, Note3
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = +125°C
VGS = 20V
VGS = 20V
1.0
– – mhos
100 µA
500 µA
– –100 nA
100 nA
Total Gate Charge
GatetoSource Charge
GatetoDrain (Miller) Charge
TurnOn Delay Time
Rise Time
Qg ID = 4A, VDS = 160V, VGS = 10V,
Qgs Note 3
– – 22 nC
– – 12 nC
Qgd – – 10 nC
td(on) VDD = 100V, ID = 1.5A, RG = 50, 15 ns
tr RD = 67, Note 3
25 ns
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
20 ns
tf 15 ns
LD Between lead, .250in. (6.0) mm from 4.5 nH
LS package and center of die contact 7.5 nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
350
100
30
pF
pF
pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 1
VSD TJ = +25°C, IS = 3.5A, VGS = 0V,
Note 3
– – 3.5 A
– – 14 A
– – 7.0 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 3.5A,
Qrr di/dt = 100A/µs, Note 3
300 450 ns
1.9 2.9 µC
Forward TurnOn Time
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Pulse width 300µs; duty cycle 2%.







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