Mode MOSFET. NTE2377 Datasheet

NTE2377 MOSFET. Datasheet pdf. Equivalent

Part NTE2377
Description N-Channel Enhancement Mode MOSFET
Feature NTE2377 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Type Package Description: The NT.
Manufacture NTE
Datasheet
Download NTE2377 Datasheet



NTE2377
NTE2377
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO3P Type Package
Description:
The NTE2377 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
D
Features:
D Low ONState Resistance
D Very HighSpeed Switching
D Converters
G
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
S
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulsed Drain Current (Note 1), IDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Allowable Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Note 1. Pulse Width 3 103s, Duty Cycle 3 1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
source.
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
ZeroGate Voltage Drain Current
GateSource Leakage Current
Cutoff Voltage
Static DrainSource On Resistance
Forward Transconductance
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
gfs
ID = 1mA, VGS = 0
VGS = 0, VDS = Max Rating
VDS = 0, VGS = +30V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 4A
VDS = 20V, ID = 4A
Min Typ Max Unit
900
V
− − 1.0 mA
− − +100 nA
2 3V
1.2 1.6 +
2.5 5.0 mho
Rev. 1013



NTE2377
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Ciss
Coss
Crss
VDS = 20V, f = 1MHz
1600
500
350
pf
pf
pf
TurnOn Time
Rise Time
TurnOff Delay Time
td(on)
tr
td(off)
VDD = 200V, ID = 4A,
VGS = 10V, RGS = 50+
20 ns
80 ns
350 ns
Fall Time
Diode Forward Voltage
tf
VSD IS = 8A, VGS = 0
150 ns
− − 1.8 V
.190 (4.82)
.787
(20.0)
.615 (15.62)
D
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
G DS
.215 (5.47)







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