N-CHANNEL MOSFET. NTE2378 Datasheet

NTE2378 MOSFET. Datasheet pdf. Equivalent

Part NTE2378
Description N-CHANNEL MOSFET
Feature NTE2378 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2378 is an N–Channe.
Manufacture NTE
Datasheet
Download NTE2378 Datasheet




NTE2378
NTE2378
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Low ON–State Resistance
D Very High–Speed Switching
D Converters
Absolute Maximum Ratings: (TA = +25°C)
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Pulsed Drain Current (Note 1), IDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Allowable Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width 10µs, Duty Cycle 1%.
Note 2. Be careful in handling the NTE2378 because it has no protection diode between gate and
source.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0
Zero–Gate Voltage Drain Current
IDSS VGS = 0, VDS = 900V
Gate–Source Leakage Current
IGSS VDS = 0, VGS = ±30V
Cutoff Voltage
VGS(off) VDS = 10V, ID = 1mA
Static Drain–Source On Resistance RDS(on) VGS = 10V, ID = 2A
Forward Transconductance
gfs VDS = 20V, ID = 2A
Min Typ Max Unit
900 –
–V
– – 1.0 mA
– – ±100 nA
2 – 3V
– 2.8 3.6
1.0 2.0 – mho



NTE2378
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Input Capactiance
Ciss
700
Output Capacitance
Reverse Transfer Capactiance
Coss
Crss
VDS = 20V, f = 1MHz
300
170
TurnOn Time
td(on)
15
Rise Time
TurnOff Delay Time
tr
td(off)
VDD = 200V, ID = 2A,
VGS = 10V, RGS = 50
35
200
Fall Time
tf
65
Diode Forward Voltage
VSD IS = 5A, VGS = 0
––
Max Unit
pf
pf
pf
ns
ns
ns
ns
1.8 V
.190 (4.82)
.787
(20.0)
.615 (15.62)
D
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
G DS
.215 (5.47)







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