N-CHANNEL MOSFET. NTE2379 Datasheet

NTE2379 MOSFET. Datasheet pdf. Equivalent

Part NTE2379
Description N-CHANNEL MOSFET
Feature NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repe.
Manufacture NTE
Datasheet
Download NTE2379 Datasheet




NTE2379
NTE2379
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous (VGS = 10V)
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V/ns
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5°C/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25°C, l = 27mH, RG = 25, IAS = 6.2A.
Note 3. ISD 6.2A, di/dt 80A/µA, VDD V(BR)DSS, TJ +150°C.



NTE2379
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
Gate Threshold Voltage
GateSource Leakage Forward
GateSource Leakage Reverse
DrainSource Leakage Current
Static DrainSource ON Resist-
ance
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = 20V
VGS = 20V
VDS = 600V, VGS = 0
VDS = 480V, VGS = 0, TC = +150°C
VGS = 10V, ID = 3.7A, Note 4
600 – – V
2.0 4.0 V
– – 100 nA
– – –100 nA
– – 100 µA
– – 500 µA
– – 1.2
Forward Transconductance
gfs VDS 100V, ID = 3.7A, Note 4
4.7 – – mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
1300 pF
Output Capacitance
Coss
160 pF
Reverse Transfer Capacitance
Crss
30 pF
TurnOn Delay Time
Rise Time
td(on)
tr
VDD = 300V, ID = 6.2A, RG = 9.1,
RD = 47, Note 4
32
18
ns
ns
TurnOff Delay Time
td(off)
55 ns
Fall Time
tf
20 ns
Total Gate Charge
Qg VGS = 10V, ID = 6.2A, VDS = 360V
– – 60 nC
GateSource Charge
Qgs
– – 8.3 nC
GateDrain (Miller) Charge
Qgd
– – 30 nC
Internal Drain Inductance
Internal Source Inductance
LD Between lead, 6mm (.250 in) from package 4.5 nH
LS and center of die contact
7.5 nH
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS (Body Diode)
– – 6.2 A
ISM (Body Diode) Note 1
– – 25 A
VSD TJ = +25°C, IS = 6.2A, VGS = 0V, Note 4 – – 1.5 V
trr TJ = +25°C, IF = 6.2A, di/dt = 100A/µs,
Qrr Note 4
450 940 ns
3.8 7.9 µC
ton Intrinsic turnon time is neglegible (turnon is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.







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