Document
NTE238 Silicon NPN Transistor Color TV, Horizontal Output
Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V Absolute Maximum Ratings; Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current–Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current–Continuous, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), TL . . . . . . . . . +275°C Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) Collector–Emitter Saturation Voltage Base Emitter Saturation Voltage SWITCHING CHARACTERISTICS Fall Time tf IC = 5A, IB1 = 1A, LB = 8µH – 0.4 1.0 µs VCE(sat) VBE(sat) IC = 5A, IB = 1A IC = 5A, IB = 1A – – – – 5.0 1.5 V V VCEO(sus) VC = 50mA, IB = 0 ICES IEBO VCE = 1500V, VBE = 0 VBE = 5V, IC = 0 750 – – – – – – 0.25 0.1 V mA mA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min E .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
.525 (13.35) R Max B C/Case
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