P-CHANNEL MOSFET. NTE2383 Datasheet

NTE2383 MOSFET. Datasheet pdf. Equivalent

Part NTE2383
Description P-CHANNEL MOSFET
Feature NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch (Compl to NTE2382) Description: The NTE.
Manufacture NTE
Datasheet
Download NTE2383 Datasheet




NTE2383
NTE2383
MOSFET
P–Channel Enhancement Mode,
High Speed Switch
(Compl to NTE2382)
Description:
The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage,
high speed power switching applications such as switching regulators, converters, solenoid, and relay
drivers.
Features:
D Lower RDS(ON)
D Improved Inductive Ruggedness
D Fast Switching Times
D Rugged Polysilicon Gate Cell Structure
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximim Ratings:
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A
Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Thermal Resistance, Case–to–Sink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Note 1. TJ = +25° to +150°C
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Note 4. L = 8.5mH, VDD = 25V, RG = 25, Starting TJ = +25°C.
Note 5. Mounting surface flat, smooth, and greased.



NTE2383
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
V(BR)DSS VGS = 0, ID = 0.25mA
Zero Gate Voltage Drain Current
IDSS VDS = 100V, VGS = 0
VDS = 80V, VGS = 0, TJ = +125°C
GateBody Leakage Current, Forward IGSS VGS = 20V
GateBody Leakage Current, Reverse IGSS VGS = 20V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 0.25mA
Static DrainSource OnResistance
rDS(on) VGS = 10V, ID = 5.3A, Note 2
Forward Transconductance
gFS VDS 50V, ID = 5.3A, Note 2
Input Capacitance
Ciss VDS = 25V, VGS = 0, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
TurnOn Delay Time
Rise Time
TurnOff Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 10.5A, ZO = 24,
MOSFET switching times are
essentially independent of operating
temperature
Fall Time
tf
Total Gate Charge
GateSource Charge
GateDrain (Miller) Charge
Qg VGS = 10V, VDS = 80V, ID = 10.5A,
Qgs
Gate charge is essentially
independent of operating
Qgd temperature
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
(Body Diode)
IS
Pulse Source Current (Body Diode)
Diode Forward Voltage
ISM Note 3
VSD TJ = +25°C, IS = 10.5A, VGS = 0V,
Note 2
Reverse Recovery Time
trr TJ = +25°C, IF = 10.5A,
dIF/dt = 100A/µs
Min
100
2.0
2.0
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Typ Max Unit
––V
0.25 mA
1.0 mA
100 nA
– –100 nA
4.0 V
0.3
– – mhos
835 pF
357 pF
94 pF
60 ns
140 ns
140 ns
140 ns
58 nC
12.6 nC
16.6 ns
10.5 A
42 A
6.3 V
300 ns







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