N-CHANNEL MOSFET. NTE2387 Datasheet

NTE2387 MOSFET. Datasheet pdf. Equivalent

Part NTE2387
Description N-CHANNEL MOSFET
Feature NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source .
Manufacture NTE
Datasheet
Download NTE2387 Datasheet




NTE2387
NTE2387
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Drain–Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Pulsed Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Drain–Source Breakdown Voltage V(BR)DSS ID = 250µA, VGS = 0
800 –
–V
Zero–Gate Voltage Drain Current
IDSS VGS = 0, VDS = 800V, TC = +25°C
2 20 µA
VGS = 0, VDS = 800V, TC = +125°C –
0.1 1.0 mA
Gate–Body Leakage Current
IGSS VDS = 0, VGS = ±30V
– 10 100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 1mA
2.1 3.0 4.0 V
Static Drain–Source On Resistance RDS(on) VGS = 10V, ID = 1.5A
– 2.7 3.0
Dynamic Characteristics
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 25V, ID = 1.5A
VDS = 25V, VGS = 0, f = 1MHz
VDD = 30V, ID = 2.3A, VGS = 10V,
RGS = 50, Rgen = 50
3.0 4.3 – mho
– 1000 1250 pf
– 80 120 pf
– 30 50 pf
– 10 25 ns
– 25 40 ns
– 130 150 ns
– 40 60 ns



NTE2387
Electrical Characteristics (Contd): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics (Contd)
Internal Drain Inductance
LD Measured from contact screw on tab 3.5 nH
to center of die
Measured from drain lead 6mm from 4.5 nH
package to center of die
Internal Source Inductance
LS Measured from the source lead
6mm from package to source
bonding pad
7.5 nH
SourceDrain Diode Ratings and Characteristics
Continuous Reverse Drain Current
IDR
– – 4A
Pulsed Reverse Drain Current
IDRM
– – 16 A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD IF = 4A, VGS = 0
1.0 1.3 V
trr IF = 4A, diF/dt = 100A/µs, VGS = 0, 1800 ns
Qrr VR = 100V
12 µC
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab







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