Controlled Switch. NTE239 Datasheet

NTE239 Switch. Datasheet pdf. Equivalent

Part NTE239
Description Silicon Controlled Switch
Feature NTE239 Silicon Controlled Switch (SCS) Description: The NTE239 is a silicon controlled switch in a T.
Manufacture NTE
Datasheet
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NTE239
NTE239
Silicon Controlled Switch (SCS)
Description:
The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for
a numerical indicator tube and switching applications.
Features:
D Selective Breakover Voltage
D Low ON Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –70V
Collector–Emitter Voltage (NPN Only, RBE = 10k), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Emitter Voltage (PNP), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –70V
Emitter–Base Voltage, VEBO
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –70V
Emitter Current, IE
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –100mA
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Emitter Current (tp 1ms, δ = 0.05), IEM
NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –500mA
PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Collector Current (NPN Only), IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C



NTE239
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
NPN Transistor
Collector Cutoff Current
ICER VCE = 70V, RBE = 10k
10 100 nA
Emitter Cutoff Current
DC Current Gain
PNP Transistor
IEBO
hFE
VEB = 5V, IC = 0
VCE = 2V, IC = 10mA
30 1000 nA
50 180
Emitter Cutoff Current
DC Current Gain
Combined Device
IEBO
hFE
VEB = 70V, IC = 0
VCB = 0, IE = 1mA
0.05 100 nA
0.72 2.5
AnodeCathode Voltage
Holding Current
VAK IA = 50mA, IC = 0, RBE = 10k1.05 1.4 V
IH RBE = 10k, IC = 10mA, VBB 0.1 0.5 1.0 mA
= 2V
TurnOff Time
toff RBE = 10k
6 12 µs
.190
(4.82)
.500
(12.7)
Min
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.018 (0.45) Dia
1
2
3
45°
.040 (1.02)
4
4
Emitter (PNP)
Collector (PNP)/
Base (NPN)
2
3
Base (PNP)/
Collector (NPN)
Emitter (NPN)
1
Transistor Basing
2
Cathode/Gate
4
Anode
3
Anode/Gate
Cathode
1
Thyristor Basing







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