Mode MOSFET. NTE2390 Datasheet

NTE2390 MOSFET. Datasheet pdf. Equivalent

Part NTE2390
Description N-Channel Enhancement Mode MOSFET
Feature NTE2390 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N−Chann.
Manufacture NTE
Datasheet
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NTE2390
NTE2390
MOSFET
NChannel Enhancement Mode,
High Speed Switch
Description:
The NTE2390 is an NChannel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures.
D Rugged SOA is Power Dissipation Limited
D SourcetoDrain Diode Characterized for Use With Inductive Loads
G
D
Absolute Maximum Ratings:
S
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DrainGate Voltage (RGS = 1M+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Drain CCuornretinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total
PDowerearteDiAsbsiopvaetio2n55(CTC.
=
..
+255C),
.......
.P.D.
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. . . 75W
0.6W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 655 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 655 to +1505C
Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.675C/W
Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 305C/W
Maximum Lead Temperature (During soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2755C
Rev. 1013



NTE2390
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
DrainSource Breakdown Voltage
ZeroGate Voltage Drain Current
GateBody Leakage Current, Forward
GateBody Leakage Current, Reverse
ON Characteristics (Note 1)
V(BR)DSS
IDSS
IGSSF
IGSSR
ID = 0.25mA, VGS = 0
VGS = 0, VDS = Max Rating
VGS = 0, VDS = 48V, TJ = +1255C
VDS = 0, VGSF = 20V
VDS = 0, VGSR = 20V
Gate Threshold Voltage
Static DrainSource On Resistance
DrainSource ONVoltage
VGS(th)
rDS(on)
VDS(on)
VDS = VGS, ID = 1mA
VDS = VGS, ID = 1mA, TJ = +1005C
VGS = 10V, ID = 6A
VGS = 10V, ID = 12A
VGS = 10V, ID = 6A, TJ = 1005C
Forward Transconductance
Dynamic Characteristics
gfs VDS = 15V, ID = 6A
Input Capacitance
Output Capacitance
Ciss
Coss
Vf =DS1M= H25zV, VGS = 0,
Reverse Transfer Capacitance
Crss
Switching Characteristics (TJ = +1005C, Note 1)
TurnOn Time
Rise Time
td(on)
tr
VRDgDen==2550V+, ID = 0.5 Rated ID,
TurnOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
GateSource Charge
Qg
Qgs
VIDD=S R=a4t8eVd,IVDGS = 10V,
GateDrain Charge
Qgd
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage
Forward TurnOn Time
Reverse Recovery Time
Internal Package Inductance
VSD IS = Rated ID, VGS = 0
ton
trr
Internal Drain Inductance
Ld
Measured from the contact screw
on tab to center of die
Measured from the drain lead 0.25”
from package to center of die
Internal Source Inductance
Ls
Measured from the source lead
0.25” from package to source bond
pad
Min Typ Max Unit
60 − − V
− − 0.2 mA
− − 1.0 mA
− − 100 nA
− − 100 nA
2.0 4.5 V
1.5 4.0 V
− − 0.2 +
− − 3.0 V
2.8 V
4 − − mhos
− − 400 pf
− − 300 pf
− − 100 pf
− − 60 ns
− − 160 ns
− − 80 ns
− − 110 ns
13 26 nC
6 nC
7 nC
1.8 3.2 V
Limited by stray inductance
300
ns
3.5 nH
4.5 nH
7.5 nH
Note 1. Pulse test: Pulse width 3 3003s, Duty cycle 3 2%.







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