NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch
Description: The NTE2392 is an N–Channel Enhancement Mode P...
NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch
Description: The NTE2392 is an N–Channel Enhancement Mode Power MOS Field Effect
Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: Drain–Source Voltage (Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Voltage (RGS = 20kΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Pulsed Drain Current (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Clamped Inductive Current (L = 100µH), ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...