N-CHANNEL MOSFET. NTE2392 Datasheet

NTE2392 MOSFET. Datasheet pdf. Equivalent

Part NTE2392
Description N-CHANNEL MOSFET
Feature NTE2392 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N–Channe.
Manufacture NTE
Datasheet
Download NTE2392 Datasheet



NTE2392
NTE2392
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2392 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Fast Switching
D Low Drive Current
D Ease of Paralleling
D No Second Breakdown
D Excellent Temperature Stability
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (RGS = 20kΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Pulsed Drain Current (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A
Clamped Inductive Current (L = 100µH), ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), TL . . . . . . . . . . +300°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W
Typical Thermal Resistance, Case–to–Sink (Note 4), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30°C/W
Note 1. TJ = +25° to +150°C
Note 2. Pulse test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Mounting surface flat, smooth, and greased.



NTE2392
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
ZeroGate Voltage Drain Current
GateBody Leakage Current
Gate Threshold Voltage
OnState Drain Current
Static DrainSource On Resistance
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
TurnOn Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
GateSource Charge
GateDrain (Miller) Charge
Internal Drain Inductance
V(BR)DSS ID = 250µA, VGS = 0
100
V
IDSS VGS = 0, VDS = 100V
– – 250 µA
VGS = 0, VDS = 80V,
TC = +125°C
– – 1000 µA
IGSS VDS = 0, VGS = ±20V
– – ±100 nA
VGS(th) VDS = VGS, ID = 250µA
2 4V
ID(on)
VDS > ID(on) x RDS(on) max,
VGS = 10V, Note 2
40
A
RDS(on) VGS = 10V, ID = 20A, Note 2
0.045 0.055 W
gfs VDS > ID(on) x RDS(on) max,
ID = 20A, Note 2
9 11 mho
Ciss VDS = 25V, VGS = 0, f = 1MHz
2000 3000 pf
Coss
1000 1500 pf
Crss 350 500 pf
td(on) VDD = 24V, ID = 20A, RI = 4.7
35 ns
tr – – 100 ns
td(off)
– – 125 ns
tf – – 100 ns
Qg VGS = 10V, ID = 50A,
Qgs VDS = 80V
63 120 nC
27 nC
Qgd 36 nC
LD Measured between the contact 5.0 nH
screw on header that is closer to
source and gate pins and center of
die
Internal Source Inductance
LS Measured from the source pin, 12.5 nH
6mm (.25 in.) from header
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
(Body Diode)
IS
– – 40 A
Pulsed Source Current (Body Diode)
Forward ON Voltage
ISM Note 3
VSD IS = 40A, VGS = 0, TJ = +25°C,
Note 3
160 A
2.5 V
Reverse Recovery Time
Reverse Recovered Charge
trr IF = 40A, diF/dt = 100A/µs,
Qrr TJ = +150°C
600 ns
3.3 µC
Note 2. Pulse test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.







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