Complementary Transistors. NTE24 Datasheet

NTE24 Transistors. Datasheet pdf. Equivalent

Part NTE24
Description Silicon Complementary Transistors
Feature NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Descri.
Manufacture NTE
Datasheet
Download NTE24 Datasheet




NTE24
NTE24 (NPN) & NTE25 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
designed for general purpose medium power amplifier and switching circuits that require collector cur-
rents to 1A.
Features:
D High Collector–Emitter Breakdown Voltage: VCEO = 80V
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Junction Temperature, TJ(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 50mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 500mA
Min Typ Max Unit
80 – – V
– – 0.1 µA
– – 100 nA
40 –
40 –
25 –



NTE24
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
VCE(sat) IC = 500mA, IB = 50mA
IC = 1000mA, IB = 100mA
– – 0.5 V
– – 1.5 V
BaseEmitter ON Voltage
VBE(on) VCE = 2V, IC = 1000mA
– – 0.5 V
Current Gain Bandwidth Product
Output Capacitance
fT VCE = 5V, IC = 200mA, f = 100MHz 50
MHz
Cob VCB = 10V, IE = 0, f = 1MHz
– – 30 pF
.200 (5.08)
.180 (4.57)
.100 (2.54)
ECB
.180
(4.57)
.594
(15.09)
.018 (0.46)
.050 (1.27)
.015 (0.38)
3.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)