Complementary Transistors. NTE2404 Datasheet

NTE2404 Transistors. Datasheet pdf. Equivalent

Part NTE2404
Description Silicon Complementary Transistors
Feature NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Descript.
Manufacture NTE
Datasheet
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NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transist NTE2404 Datasheet
Recommendation Recommendation Datasheet NTE2404 Datasheet





NTE2404
NTE2404 (NPN) & NTE2405 (PNP)
Silicon Complementary Transistors
Darlington, General Purpose
Description:
The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an
SOT–23 type surface mount case designed for general–purpose applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350K/W
Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm).
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Current
Emitter–Base Current
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Capacitance
ICBO
IEBO
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
fT
Cc
VCBO = 30V
VEB = 10V
IC = 10mA
IC = 10µA
IE = 100nA
IC = 100mA, IB = 0.1mA
IC = 100mA, IB = 0.1mA
IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 30mA, VCE = 5V, f = 100MHz
IE = 0, VCB = 30V
Min Typ Max Unit
– – 100 nA
– – 100 nA
30 – – V
40 – – V
10 – – V
– – 1V
– – 1.5 V
4000 –
10000 –
20000 –
– 220 – MHz
– 3.5 – pF



NTE2404
Schematic Diagram
CC
BB
NPN
E
PNP
E
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)





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