NPN Transistor. NTE2406 Datasheet

NTE2406 Transistor. Datasheet pdf. Equivalent

Part NTE2406
Description Silicon NPN Transistor
Feature NTE2406 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407) Absolute Maximu.
Manufacture NTE
Datasheet
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NTE2406 Silicon NPN Transistor General Purpose Amp, Surface NTE2406 Datasheet
Recommendation Recommendation Datasheet NTE2406 Datasheet





NTE2406
NTE2406
Silicon NPN Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2407)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), RthJA . . . . . . . . . . . . . . 556°C/W
Total Device Dissipation (Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), RthJA . . . . . . . . 417°C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
IBL
IC = 10µA, IE = 0
IC = 10mA, IB = 0
IE = 10µA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = +125°C
VCE = 60V, VEB(off) = 3V
VEB = 3V, IC = 0
VCE = 60V, VEB(off) = 3V
Min Typ Max Unit
75 – – V
40 – – V
6––V
– – 0.01 µA
– – 10 µA
– – 10 nA
– – 10 nA
– – 20 nA



NTE2406
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
ON Characteristics (Note 3)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 10V, IC = 0.1mA
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 10mA, TA = 55°C
VCE = 1V, IC = 150mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
35
50
75
35
50
100
40
0.6
Current GainBandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
SmallSignal Current Gain
Output Admittance
CollectorBase Time Constant
Noise Fiqure
Switching Characteristics
fT
Cobo
Cibo
hie
hre
hfe
hoe
rbCc
NF
IC = 20mA, VCB = 20V, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
VEB = 0.5V, IC = 0, f = 1MHz
VCE = 10V, IC = 1mA, f = 1kHz
VCE = 10V, IC = 10mA, f = 1kHz
VCE = 10V, IC = 1mA, f = 1kHz
VCE = 10V, IC = 10mA, f = 1kHz
VCE = 10V, IC = 1mA, f = 1kHz
VCE = 10V, IC = 10mA, f = 1kHz
VCE = 10V, IC = 1mA, f = 1kHz
VCE = 10V, IC = 10mA, f = 1kHz
VCB = 20V, IE = 20mA, f = 31.8MHz
IC = 100µA, VCE = 10V,
RS = 1k,,f = 1kHz
300
2
0.25
50
75
5
25
Delay Time
Rise Time
Storage Time
Fall Time
td VCC = 30V, IC = 150mA,
tr VBE(off) = 0.5V, IB1 = 15mA
ts VCC = 30V, IC = 150mA,
tf IB1 = IB2 = 15mA
––
––
––
––
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Max Unit
300
0.3 V
1.0 V
1.2 V
2.0 V
MHz
8 pF
25 pF
8 k
1.25
8
4
k
x 104
x 104
300
375
35 µmhos
200 µmhos
150 ps
4 dB
10 ns
25 ns
225 ns
60 ns





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