PNP Transistor. NTE2407 Datasheet

NTE2407 Transistor. Datasheet pdf. Equivalent

Part NTE2407
Description Silicon PNP Transistor
Feature NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) Absolute Maximu.
Manufacture NTE
Datasheet
Download NTE2407 Datasheet




NTE2407
NTE2407
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2406)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), RthJA . . . . . . . . . . . . . . 556°C/W
Total Device Dissipation (Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), RthJA . . . . . . . . 417°C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Base Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IB
IC = 10µA, IE = 0
IC = 10mA, IB = 0, Note 3
IE = 10µA, IC = 0
VCB = 50V, IE = 0
VCB = 50V, IE = 0, TA = +125°C
VCE = 30V, VEB(off) = 0.5V
VCE = 30V, VEB(off) = 0.5V
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
60 – – V
60 – – V
5––V
– – 0.01 µA
– – 10 µA
– – 50 nA
– – 50 nA



NTE2407
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 10V, IC = 0.1mA
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
35
50
100
100 300
50
– – 0.4
– – 1.6
– – 1.3
– – 2.6
V
V
V
V
Current GainBandwidth Product
fT IC = 50mA, VCE = 20V,
f = 100MHz, Note 3
300
MHz
Output Capacitance
Input Capacitance
Switching Characteristics
Cobo
Cibo
VCB = 10V, IE = 0, f = 1MHz
VEB = 2V, IC = 0, f = 1MHz
– – 8 pF
– – 30 pF
TurnOn Time
Delay Time
Rise Time
TurnOn Time
Delay Time
Rise Time
ton VCC = 30V, IC = 150mA,
td IB1 = 15mA
tr
toff VCC = 6V, IC = 150mA,
ts IB1 = IB2 = 15mA
tf
– – 45 ns
– – 10 ns
– – 40 ns
– – 100 ns
– – 80 ns
– – 30 ns
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.016 (0.48)
C
.098
(2.5)
Max
BE
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.007 (0.2)
.051
(1.3)







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