PNP Transistor. NTE2409 Datasheet

NTE2409 Transistor. Datasheet pdf. Equivalent

Part NTE2409
Description Silicon PNP Transistor
Feature NTE2409 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408) Description: Th.
Manufacture NTE
Datasheet
Download NTE2409 Datasheet




NTE2409
NTE2409
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2408)
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TA = +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 ° to +150°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
ICBO
VBE
VCE(sat)
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TJ = +150°C
VCE = 5V, IC = 2mA, Note 2
VCE = 5V, IC = 10mA, Note 2
IC = 10mA, IB = 0.5mA, Note 3
IC = 100mA, IB = 5mA, Note 3
Min Typ Max Unit
– 1 15 nA
– – 4 µA
600 650 750 mV
– – 820 mV
– 75 300 mV
– 250 650 mV
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.



NTE2409
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Capacitance
SmallSignal Current Gain
Noise Figure
VBE(sat)
hFE
fT
Cc
hfe
NF
IC = 10mA, IB = 0.5mA, Note 3
IC = 100mA, IB = 5mA, Note 3
VCE = 5V, IC = 2mA
VCE = 5V, IC = 10mA, f = 35MHz
VCB = 10V, IE = Ie = 0, f = 1MHz
VCE = 5V, IC = 2mA
VCE = 5V, IC = 200µA, f = 1kHz,
B = 200Hz, RS = 2k
700 mV
850 mV
220 475
150 MHz
4.5 pF
75 900
2 10 dB
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







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