NPN Transistor. NTE2410 Datasheet

NTE2410 Transistor. Datasheet pdf. Equivalent

Part NTE2410
Description Silicon NPN Transistor
Feature NTE2410 Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411) Description: The NTE2410 is.
Manufacture NTE
Datasheet
Download NTE2410 Datasheet




NTE2410
NTE2410
Silicon NPN Transistor
High Voltage Amp/Driver
(Comp to NTE2411)
Description:
The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use
in high voltage applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (TA = +25°C, FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW
Total Power Dissipation (TA = +25°C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IC = 1mA, IB = 0, Note 3
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = +100°C
Emitter Cutoff Current
IEBO VEB = 4V, IC = 0
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
Min Typ Max Unit
160 –
180 –
6–
––
––
––
–V
–V
–V
50 nA
50 µA
50 nA



NTE2410
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain
hFE IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 50mA, VCE = 5V
80
80 250
30
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
VCE(sat)
VBE(sat)
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
– – 0.15 V
– – 0.20 V
– – 1.0 V
– – 1.0 V
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







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