PNP Transistor. NTE2411 Datasheet

NTE2411 Transistor. Datasheet pdf. Equivalent

Part NTE2411
Description Silicon PNP Transistor
Feature NTE2411 Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410) Description: The NTE2411 i.
Manufacture NTE
Datasheet
Download NTE2411 Datasheet



NTE2411
NTE2411
Silicon PNP Transistor
High Voltage Amp/Driver
(Compl to NTE2410)
Description:
The NTE2411 is a silicon PNP transistor in an SOT–23 type surface mount case designed for use in
high voltage applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA = +25°C, FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW
Total Power Dissipation (TA = +25°C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. FR–5 = 1.0 x 0.75 x 0.62 in.
Note 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IC = 1mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 100V, IE = 0
VCB = 100V, IE = 0, TA = +100°C
Min Typ Max Unit
150 –
160 –
5–
––
––
–V
–V
–V
50 nA
50 µA



NTE2411
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
hFE IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
50
60 240
IC = 50mA, VCE = 5V
50
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
VCE(sat)
VBE(sat)
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
– – 1.0 V
– – 1.0 V
– – 1.0 V
IC = 50mA, IB = 5mA
– – 1.0 V
Small–Signal Characteristics
Current GainBandwidth Product
Output Capacitance
Small Signal Current gain
Noise Figure
fT IC = 10mA, VCE = 10V, f = 100MHz 100 300 MHz
Cobo VCB = 10V, IE = 0, f = 1MHz
– – 6 pF
hfe IC = 1mA, VCE = 10V, f = 1kHz
40 200
NF IC = 200µA, VCE = 5V, RS = 10,
f = 10Hz to 15.7kHz
– – 8 dB
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)