PNP Transistor. NTE2413 Datasheet

NTE2413 Transistor. Datasheet pdf. Equivalent

Part NTE2413
Description Silicon PNP Transistor
Feature NTE2413 Silicon PNP Transistor General Purpose, High Voltage Amp, (Compl to NTE2412) Description: Th.
Manufacture NTE
Datasheet
Download NTE2413 Datasheet




NTE2413
NTE2413
Silicon PNP Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2412)
Description:
The NTE2413 is a silicon PNP transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage (RBE = 2.7k), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA +35°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Mounted on a ceramic substrate 2.5cm2 x 0.7mm.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Collector–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
ICBO
ICER
VCE(sat)
hFE
fT
VCB = 200V, IE = 0
VCE = 250V, RBE = 2.7k
VCE = 200V, RBE = 2.7k,
TJ = +150°C
IC = 30mA, IB = 5mA
VCE = 20V, IC = 25mA
VCE = 10V, IE = 10mA,
f = 35MHz
Capacitance
Cre VCE = 30V, IC = 0, f = 1MHz
Min Typ Max Unit
– – 10 nA
– – 50 nA
– – 10 µA
– – 0.8 V
50 – –
60 – – MHz
– – 1.6 pF



NTE2413
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)







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