Complementary Transistors. NTE2426 Datasheet

NTE2426 Transistors. Datasheet pdf. Equivalent

Part NTE2426
Description Silicon Complementary Transistors
Feature NTE2426 (NPN) & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The N.
Manufacture NTE
Datasheet
Download NTE2426 Datasheet




NTE2426
NTE2426 (NPN) & NTE2427 (PNP)
Silicon Complementary Transistors
Darlington Switch
Description:
The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount
package designed for use in industrial switching applications such as print hammer, solenoid, relay,
and lamp drivers.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature (Note 2), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab (Note 2), RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Note 2. Based on maximum average junction temperature in line with common industrial practice.
The resulting higher junction teperature of the output transistor part is taken into account.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICES
IEBO
hFE
VCER = 80V, VBE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 150mA, Note 3
VCE = 10V, IC = 500mA, Note 3
Note 3. Measured under pulsed conditions.
Min Typ Max Unit
– – 10 µA
– – 10 µA
1000 –
2000 –



NTE2426
Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
TurnOn Time
TurnOff Time
VCE(sat)
VBE(sat)
ton
toff
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA, TJ = +150°C
IC = 500mA, IB = 0.5mA
IC = 500mA, IBon = IBoff = 0.5mA
Typ
400
1500
Max
1.3
1.3
1.9
Unit
V
V
V
ns
ns
Schematic Diagram
NTE2426
NPN
C
B
NTE2427
PNP
C
B
EE
.059 (1.5)
.174 (4.42)
.067 (1.7)
.015 (0.32)
ECB
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min







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