Complementary Transistors. NTE243 Datasheet

NTE243 Transistors. Datasheet pdf. Equivalent

Part NTE243
Description Silicon Complementary Transistors
Feature NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description.
Manufacture NTE
Datasheet
Download NTE243 Datasheet




NTE243
NTE243 (NPN) & NTE244 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 4A
= 3V Max @ IC = 8A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 1
ICEO VCE = 40V, IE = 0
ICEX VCE = 80V, VBE(off) = 1.5V
VCE = 80V, VBE(off) = 1.5V, TA = +150°C
IEBO VBE = 5V, IC = 0
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Min Typ Max Unit
80 – – V
– – 0.5 mA
– – 0.5 mA
– – 5.0 mA
– – 2.0 mA



NTE243
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 16mA
IC = 8A, IB = 80mA
IC = 8A, IB = 80mA
VCE = 3V, IC = 4A
750 18000
100
– – 2.0 V
– – 3.0 V
– – 4.0 V
– – 2.8 V
SmallSignal Current Gain
hfe VCE = 3V, IC = 3A, f = 1kHz
Magnitude of Common Emitter
SmallSignal ShortCircuit
|hfe| VCE = 3V, IC = 3A, f = 1MHz
Forward Current Transfer Ratio
300
4.0
MHz
Output Capacitance
NTE243
NTE244
Cob
VCB = 10V, IE = 0, f = 0.1MHz
pF
– – 200
– – 300 pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE243
C .135 (3.45) Max
B
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
E
.312 (7.93) Min
.040 (1.02)
NTE244
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
C
B
.430
(10.92)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
E
Base
Collector/Case







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