NPN Transistor. NTE2430 Datasheet

NTE2430 Transistor. Datasheet pdf. Equivalent

Part NTE2430
Description Silicon NPN Transistor
Feature NTE2430 Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431) Description: The NTE2430 i.
Manufacture NTE
Datasheet
Download NTE2430 Datasheet




NTE2430
NTE2430
Silicon NPN Transistor
High Voltage Amp/Switch
(Compl to NTE2431)
Description:
The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Collector Capacitance
Transitional Frequency
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
Cc
fT
VCE = 300V, IB = 0
VEB = 5V, IC = 0
IC = 50mA, IB = 4mA
IC = 50mA, IB = 4mA
VCE = 10V, IC = 20mA
IE = Ie = 0, VCB = 10, f = 1MHz
VCE = 10V, IC = 10mA, f = 5MHz
Min Typ Max Unit
– – 20 nA
– – 10 µA
– – 500 mV
– – 1.3 V
40 –
– – 2 pF
70 –
– MHz



NTE2430
.059 (1.5)
.174 (4.42)
.067 (1.7)
.015 (0.32)
ECB
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min







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