PNP Transistor. NTE2431 Datasheet

NTE2431 Transistor. Datasheet pdf. Equivalent

Part NTE2431
Description Silicon PNP Transistor
Feature NTE2431 Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430) Description: The NTE2431 i.
Manufacture NTE
Datasheet
Download NTE2431 Datasheet




NTE2431
NTE2431
Silicon PNP Transistor
High Voltage Amp/Switch
(Compl to NTE2430)
Description:
The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Collector–Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
Collector–Emitter Saturation Voltage
DC Current Gain
Collector Capacitance
Transitional Frequency
ICBO VCB = 280V, IE = 0
ICEO VCE = 250V, IB = 0
IEBO VEB = 6V, IC = 0
V(BR)CEO IC = 50mA, IB = 0, L = 25mH
VCE(sat) IC = 50mA, IB = 5mA
hFE VCE = 10V, IC = 50mA
Cc IE = Ie = 0, VCB = 10, f = 1MHz
fT VCE = 10V, IC = 10mA, f = 30MHz
Min Typ Max Unit
– – 1 µA
– – 50 µA
– – 20 µA
300 – – V
––2V
30 – 120
– – 15 pF
15 –
– MHz



NTE2431
.059 (1.5)
.174 (4.42)
.067 (1.7)
.015 (0.32)
ECB
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)