Complementary Transistors. NTE245 Datasheet

NTE245 Transistors. Datasheet pdf. Equivalent

Part NTE245
Description Silicon Complementary Transistors
Feature NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description.
Manufacture NTE
Datasheet
Download NTE245 Datasheet




NTE245
NTE245 (NPN) & NTE246 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 4000 Typ @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector–Emitter Leakage Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 1
ICEO VCE = 40V, IB = 0
ICER VEB = 80V, RBE = 1k
VEB = 80V, RBE = 1k, TC = +150°C
IEBO VBE = 5V, IC = 0
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Min Typ Max Unit
80 – – V
– – 1.0 mA
– – 1.0 mA
– – 5.0 mA
– – 2.0 mA



NTE245
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Voltage
hFE
VCE(sat)
VBE
VCE = 3V, IC = 5A
IC = 5A, IB = 20mA
IC = 10A, IB = 50mA
VCE = 3V, IC = 5A
1000 – –
– – 2.0 V
– – 4.0 V
– – 3.0 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE245
C
B .135 (3.45) Max
.350 (8.89)
E
.875 (22.2)
Dia Max
Seating
Plane
NTE246
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
.430
C (10.92)
B
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
E







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