Complementary Transistors. NTE247 Datasheet

NTE247 Transistors. Datasheet pdf. Equivalent

Part NTE247
Description Silicon Complementary Transistors
Feature NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description.
Manufacture NTE
Datasheet
Download NTE247 Datasheet



NTE247
NTE247 (NPN) & NTE248 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: hFE = 3500 Typ @ IC = 5A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 1
ICEO VCE = 50V, IE = 0
ICEX VCE = 100V, VBE(off) = 1.5V
VCE = 100V, VBE(off) = 1.5V, TA = +150°C
IEBO VBE = 5V, IC = 0
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Min Typ Max Unit
100 –
––
––
––
––
–V
1.0 mA
0.5 mA
5.0 mA
2.0 mA



NTE247
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 3V, IC = 6A
VCE = 3V, IC = 12A
IC = 6A, IB = 24mA
IC = 12A, IB = 120mA
IC = 12A, IB = 120mA
VCE = 3V, IC = 6A
750 18000
100
– – 2.0 V
– – 3.0 V
– – 4.0 V
– – 2.8 V
SmallSignal Current Gain
hfe VCE = 3V, IC = 5A, f = 1kHz
Magnitude of Common Emitter
SmallSignal ShortCircuit
|hfe| VCE = 3V, IC = 5A, f = 1MHz
Forward Current Transfer Ratio
300
4.0
MHz
Output Capacitance
NTE247
NTE248
Cob
VCB = 10V, IE = 0, f = 0.1MHz
pF
– – 300
– – 500 pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE247
C .135 (3.45) Max
B
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
E
.312 (7.93) Min
.040 (1.02)
NTE248
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
C
B
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
E
Base
Collector/Case







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