Complementary Transistors. NTE249 Datasheet

NTE249 Transistors. Datasheet pdf. Equivalent

Part NTE249
Description Silicon Complementary Transistors
Feature NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description.
Manufacture NTE
Datasheet
Download NTE249 Datasheet




NTE249
NTE249 (NPN) & NTE250 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in complementary general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 3500 Typ @ IC = 10A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Emitter Leakage Current
Emitter Cutoff Current
V(BR)CEO IC = 100mA, IB = 0, Note 1
ICEO VCE = 50V, IE = 0
ICER VCB = 100V, RBE = 1k
VCB = 100V, RBE = 1k, TA = +150°C
IEBO VBE = 5V, IC = 0
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Min Typ Max Unit
100 –
––
––
––
––
–V
3.0 mA
1.0 mA
5.0 mA
5.0 mA



NTE249
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Voltage
hFE
VCE(sat)
VBE
VCE = 3V, IC = 10A
IC = 10A, IB = 40mA
IC = 16A, IB = 80mA
VCE = 3V, IC = 10A
1000 – –
– – 2.5 V
– – 4.0 V
– – 3.0 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE249
C
B .135 (3.45) Max
.350 (8.89)
E
.875 (22.2)
Dia Max
Seating
Plane
NTE250
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
.430
C (10.92)
B
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
E







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