NPN Transistor. NTE2503 Datasheet

NTE2503 Transistor. Datasheet pdf. Equivalent

Part NTE2503
Description Silicon NPN Transistor
Feature NTE2503 Silicon NPN Transistor High Gain Switch Features: D High DC Current Gain D High Current Capa.
Manufacture NTE
Datasheet
Download NTE2503 Datasheet




NTE2503
NTE2503
Silicon NPN Transistor
High Gain Switch
Features:
D High DC Current Gain
D High Current Capacity
D Low Collector–Emitter Saturation Voltage
D High Emitter–Base Voltage
Applications:
D AF Amplifier
D Various Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB = 20V, IE = 0
VEB = 10V, IC = 0
IC = 50mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 50mA, VCE = 10V
VCB = 10V, f = 1MHz
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
800 1500 3200
600 – –
– 270 – MHz
– 9 – pF



NTE2503
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Collector Saturation Voltage
Base Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
TurnOn Time
Storage Time
Fall Time
VCE(sat) IC = 500mA, IB = 10mA
VBE(sat) IC = 500mA, IB = 10mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
ton IB1 = 100mA,
tstg
IB2 = IC = 300mA,
Pulse Width = 20µs,
tf Duty Cycle 1%
0.15 0.50
0.9 1.2
30 – –
25 – –
15 – –
0.1
0.6
0.06
Unit
V
V
V
V
V
µs
µs
µs
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
ECB
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max







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