NPN Transistor. NTE2504 Datasheet

NTE2504 Transistor. Datasheet pdf. Equivalent

Part NTE2504
Description Silicon NPN Transistor
Feature NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: D Large Current Capacity (IC = 2A.
Manufacture NTE
Datasheet
Download NTE2504 Datasheet




NTE2504
NTE2504
Silicon NPN Transistor
High Gain Audio Amplifier
Features:
D Large Current Capacity (IC = 2A)
D Adoption of MBIT Process
D High DC Current Gain: hFE = 800 to 3200
D Low Collector–Emitter Saturation Voltage: VCE(sat) < 0.5V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 20V, IE = 0
VEB = 10V, IC = 0
VCE = 5V, IC = 500mA
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
fT
Cob
VCE(sat)
VBE(sat)
VCE = 10V, IC = 50mA
VCE = 10V, f = 1MHz
IC = 1A, IB = 20mA
IC = 1A, IB = 20mA
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
800 1500 3200
– 260 – MHz
– 27 – pF
– 0.15 0.5 V
– 0.85 1.2 V
30 – – V



NTE2504
.315 (8.0)
.106 (2.7)
.433
(11.0)
EC B
.610
(15.5)
.094 (2.4)







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