NPN Transistor. NTE2505 Datasheet

NTE2505 Transistor. Datasheet pdf. Equivalent

Part NTE2505
Description Silicon NPN Transistor
Feature NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity .
Manufacture NTE
Datasheet
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NTE2505
NTE2505
Silicon NPN Transistor
Low Frequency, General Purpose Amp
Features:
D High Current Capacity
D High DC Current Gain
D Low Collector Emitter Saturation Voltage
D High Emitter Base Breakdown Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB = 20V, IE = 0
VEB = 10V, IC = 0
VCE = 5V, IC = 500mA
VCE = 5V, IC = 1A
VCE = 10V, IC = 50mA
VCB = 10V, f = 1MHz
IC = 1A, IB = 20mA
IC = 1A, IB = 20mA
Min Typ Max Unit
– – 100 nA
– – 100 nA
800 1500 3200
600 – –
– 260 – MHz
– 27 – pF
– 0.15 0.5 V
– 0.85 1.2 V



NTE2505
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0
30
Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE =
25
Emitter Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0
15
TurnOn Time
Storage Time
Fall Time
ton VCC = 10V, VBE = 5V,
0.14
tstg
100IB1 = 100IB2 = IC = 700mA,
Pulse Width = 20µs,
1.35
tf Duty Cycle 1%
0.1
V
V
V
µs
µs
µs
.271 (6.9)
.098
(2.5)
.137
(3.5)
BCE
.039 (1.0)
.039 (1.0)
.122
(3.1)
.177
(4.5)
.161
(4.1)
.098 (2.5)







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