Complementary Transistors. NTE2508 Datasheet

NTE2508 Transistors. Datasheet pdf. Equivalent

Part NTE2508
Description Silicon Complementary Transistors
Feature NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D Hi.
Manufacture NTE
Datasheet
Download NTE2508 Datasheet



NTE2508
NTE2508 (NPN) & NTE2509 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 500MHz
D High Breakdown Voltage: VCEO = 120V Min
D Low Reverse Transfer Capacitance and Excellent HF Response
Applications:
D High–Definition CRT Display Video Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 80V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 50mA
VCE = 10V, IC = 200mA
VCE = 10V, IC = 50mA
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
40 – 320
20 – –
– 400 – MHz



NTE2508
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2508
NTE2509
Cob VCB = 30V, f = 1MHz
3.1 pF
4.4 pF
Reverse Transfer Capacitance
NTE2508
NTE2509
Cre VCB = 30V, f = 1MHz
2.7 pF
4.0 pF
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE(sat) IC = 50mA, IB = 5mA
VBE(sat) IC = 50mA, IB = 5mA
– – 1.0 V
– – 1.0 V
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.610
(15.5)
.130
(3.3)
.094 (2.4)







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