NPN Transistor. NTE2510 Datasheet

NTE2510 Transistor. Datasheet pdf. Equivalent

Part NTE2510
Description Silicon NPN Transistor
Feature NTE2510 Silicon NPNTransistor High Frequency Video Output Features: D High Gain Bandwidth Product: f.
Manufacture NTE
Datasheet
Download NTE2510 Datasheet



NTE2510
NTE2510
Silicon NPNTransistor
High Frequency Video Output
Features:
D High Gain Bandwidth Product: fT = 2GHz
D High Current Capacity: IC = 500mA
Applications:
D High–Definition CRT Display Video Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 20V, IE = 0
VEB = 2V, IC = 0
VCE = 5V, IC = 50mA
VCE = 5V, IC = 500mA
VCE = 5V, IC = 100mA
Min Typ Max Unit
– – 0.1 µA
– – 5.0 µA
60 – 120
20 – –
– 2.0 – GHz



NTE2510
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
Reverse Transfer Capacitance
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Cob
Cre
VCE(sat)
VBE(sat)
VCB = 10V, f = 1MHz
VCB = 10V, f = 1MHz
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
6.0 pF
4.6 pF
0.3 0.8 V
0.9 1.2 V
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.610
(15.5)
.130
(3.3)
.094 (2.4)







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