Complementary Transistors. NTE2513 Datasheet

NTE2513 Transistors. Datasheet pdf. Equivalent

Part NTE2513
Description Silicon Complementary Transistors
Feature NTE2513 (NPN) & NTE2514 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low .
Manufacture NTE
Datasheet
Download NTE2513 Datasheet




NTE2513
NTE2513 (NPN) & NTE2514 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Gain–Bandwidth Product
D Excellent Linearity of hFE
D Fast Switching Time
Applications:
D Display Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
NTE2513
NTE2514
ICBO
IEBO
hFE
fT
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 500mA
VCE = 2V, IC = 6A
VCE = 5V, IC = 1A
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
140 – 240
35 – –
– 180 – MHz
– 130 – MHz



NTE2513
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2513
NTE2514
Cob
VCB = 10V, f = 1MHz
65 pF
95 pF
Collector Emitter Saturation Voltage
NTE2513
NTE2514
VCE(sat)
IC = 4A, IB = 200mA
200 400 mV
250 500 mV
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
TurnOn Time
Storage Time
NTE2513
NTE2514
VBE(sat) IC = 4A, IB = 200mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
ton VCC = 25V, VBE = 5V,
tstg
10IB1 = 10IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
0.95 1.3
60 – –
50 – –
6––
50
V
V
V
V
ns
500
450
ns
ns
Fall Time
tf
20 ns
Note 1. For NTE2514, the polarity is reversed.
.315 (8.0)
.106 (2.7)
C
EB
.433
(11.0)
.610
(15.5)
.094 (2.4)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)