Complementary Transistors. NTE2515 Datasheet

NTE2515 Transistors. Datasheet pdf. Equivalent

Part NTE2515
Description Silicon Complementary Transistors
Feature NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low .
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Datasheet
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NTE2515
NTE2515 (NPN) & NTE2516 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Gain–Bandwidth Product
D Excellent Linearity of hFE
D Fast Switching Time
Applications:
D Display Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
NTE2515
NTE2516
ICBO
IEBO
hFE
fT
VCB = 100V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 500mA
VCE = 5V, IC = 3A
VCE = 10V, IC = 500mA
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
140 – 240
40 – –
– 180 – MHz
– 130 – MHz



NTE2515
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2515
NTE2516
Cob
VCB = 10V, f = 1MHz
40 pF
65 pF
Collector Emitter Saturation Voltage
NTE2515
NTE2516
VCE(sat)
IC = 2A, IB = 200mA
150 400 mV
200 500 mV
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
TurnOn Time
Storage Time
NTE2515
NTE2516
VBE(sat) IC = 2A, IB = 200mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
ton VCC = 25V, VBE = 5V,
tstg
10IB1 = 10IB2 = IC = 2A,
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
0.9 1.2
120 – –
100 – –
6––
100
V
V
V
V
ns
900
800
ns
ns
Fall Time
tf
50 ns
Note 1. For NTE2514, the polarity is reversed.
.315 (8.0)
.106 (2.7)
C
EB
.433
(11.0)
.610
(15.5)
.094 (2.4)







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