1K 64 x 16 SERIAL MICROWIRE EEPROM
ST93CS46 ST93CS47
1K (64 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS D...
Description
ST93CS46 ST93CS47
1K (64 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE www.DataSheet4U.com – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46
8 1
PSDIP8 (B) 0.4mm Frame
8 1
SO8 (M) 150mil Width
Figure 1. Logic Diagram DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer. Table 1. Signal Names
S D Q C PRE W VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Protect Enable Write Enable Supply Voltage Ground
VCC
D C S PRE W ST93CS46 ST93CS47 Q
VSS
AI00884B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/16
ST93CS46, ST93CS47
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin...
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