93CS46 Datasheet: 1K 64 x 16 SERIAL MICROWIRE EEPROM





93CS46 1K 64 x 16 SERIAL MICROWIRE EEPROM Datasheet

Part Number 93CS46
Description 1K 64 x 16 SERIAL MICROWIRE EEPROM
Manufacture STMicroelectronics
Total Page 16 Pages
PDF Download Download 93CS46 Datasheet PDF

Features: ST93CS46 ST93CS47 1K (64 x 16) SERIAL MI CROWIRE EEPROM NOT FOR NEW DESIGN 1 MI LLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTA GE www.DataSheet4U.com – 3V to 5.5V f or the ST93CS46 – 2.5V to 5.5V for th e ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENT IAL READ OPERATION 5ms TYPICAL PROGRAMM ING TIME ST93CS46 and ST93CS47 are repl aced by the M93S46 8 1 PSDIP8 (B) 0.4m m Frame 8 1 SO8 (M) 150mil Width Figu re 1. Logic Diagram DESCRIPTION The ST9 3CS46 and ST93CS47 are 1K bit Electrica lly Erasable Programmable Memory (EEPRO M) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS tech nology. The memory is accessed through a serial input D and output Q. The 1K b it memory is organized as 64 x 16 bit w ords.The memory is accessed by a set of instructions which include Read, Write , Page Write, Write All and instructions used to set the memory prote.

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ST93CS46
ST93CS47
1K (64 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
www.DataSheet43UV.ctoom5.5V for the ST93CS46
– 2.5V to 5.5V for the ST93CS47
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS46 and ST93CS47 are replaced by
the M93S46
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93CS46 and ST93CS47 are 1K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 1K bit memory is organized as 64 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
Table 1. Signal Names
S Chip Select Input
D Serial Data Input
Q Serial Data Output
C Serial Clock
PRE
W
Protect Enable
Write Enable
VCC Supply Voltage
VSS Ground
D
C
S
PRE
W
VCC
ST93CS46
ST93CS47
VSS
Q
AI00884B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/16

                    
                    






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