NPN Transistor. NTE2521 Datasheet

NTE2521 Transistor. Datasheet pdf. Equivalent

Part NTE2521
Description Silicon NPN Transistor
Feature NTE2521 Silicon NPN Transistor Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 4.
Manufacture NTE
Datasheet
Download NTE2521 Datasheet




NTE2521
NTE2521
Silicon NPN Transistor
Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 400MHz Typ
D High Breakdown Voltage: VCEO 250V Min
D High Current
D Low Reverse Transfer Capacitance and Excellent HF Response
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
ICBO
IEBO
hFE
fT
Cob
Cre
VCB = 150V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 50mA
VCE = 10V, IC = 250mA
VCE = 30V, IC = 100mA
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
60 – 320
20 – –
– 400 – MHz
– 4.2 – pF
– 3.4 – pF



NTE2521
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
VCE(sat) IC = 50mA, IB = 5mA
VBE(sat) IC = 50mA, IB = 5mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 100µA, IC = 0
– – 1.0 V
– – 1.0 V
250 – – V
250 – – V
3––V
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.610
(15.5)
.130
(3.3)
.094 (2.4)







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