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NTE2521 Dataheets PDF



Part Number NTE2521
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet NTE2521 DatasheetNTE2521 Datasheet (PDF)

NTE2521 Silicon NPN Transistor Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 400MHz Typ D High Breakdown Voltage: VCEO ≥ 250V Min D High Current D Low Reverse Transfer Capacitance and Excellent HF Response Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . .

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NTE2521 Silicon NPN Transistor Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 400MHz Typ D High Breakdown Voltage: VCEO ≥ 250V Min D High Current D Low Reverse Transfer Capacitance and Excellent HF Response Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre Test Conditions VCB = 150V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 50mA VCE = 10V, IC = 250mA VCE = 30V, IC = 100mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz Min – – 60 20 – – – Typ – – – – 400 4.2 3.4 Max 0.1 0.1 320 – – – – MHz pF pF Unit µA µA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Symbol VCE(sat) VBE(sat) Test Conditions IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA Min – – 250 250 3 Typ – – – – – Max 1.0 1.0 – – – Unit V V V V V V(BR)CBO IC = 10µA, IE = 0 V(BR)CEO IC = 1mA, RBE = ∞ V(BR)EBO IE = 100µA, IC = 0 .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4) .


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