Complementary Transistors. NTE2526 Datasheet

NTE2526 Transistors. Datasheet pdf. Equivalent

Part NTE2526
Description Silicon Complementary Transistors
Feature NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low .
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Datasheet
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NTE2526
NTE2526 (NPN) & NTE2527 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector–Emitter Saturation Voltage
D High Current and High fT
D Excellent Linearity of hFE
D Fast Switching Time
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
NTE2526
NTE2527
ICBO
IEBO
hFE
fT
VCB = 100V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 500mA
VCE = 5V, IC = 3A
VCE = 10V, IC = 500mA
Output Capacitance
NTE2527
Cob
VCB = 10V, f = 1MHz
NTE2526
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
140 – 400
40 – –
– 180 – MHz
– 130 – MHz
– 40 – pF
– 65 – pF



NTE2526
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
NTE2526
VCE(sat)
IC = 2A, IB = 200mA
150 400 mV
NTE2527
200 500 mV
BaseEmitter Saturation Voltage
VBE(sat) IC = 2A, IB = 200mA
0.9 1.2 V
CollectorBase Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
120
V
CollectorEmitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE =
100
V
EmitterBase Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
6 – –V
TurnOn Time
Storage Time
NTE2526
ton VCC = 50V, VBE = 5V,
tstg
10IB1 = 10IB2 = IC =2A,
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
100 ns
900 ns
NTE2527
800 ns
Fall Time
tf
50 ns
Note 1. For NTE2527, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
.275
(7.0)
BCE
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)







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