Complementary Transistors. NTE2528 Datasheet

NTE2528 Transistors. Datasheet pdf. Equivalent

Part NTE2528
Description Silicon Complementary Transistors
Feature NTE2528 (NPN) & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch Features: D High.
Manufacture NTE
Datasheet
Download NTE2528 Datasheet



NTE2528
NTE2528 (NPN) & NTE2529 (PNP)
Silicon Complementary Transistors
High Voltage Switch
Features:
D High Voltage and High Current Capacity
D Fast Switching Time
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
NTE2528
ICBO
IEBO
hFE
fT
Cob
VCB = 120V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 100mA
VCE = 5V, IC = 10A
VCE = 10V, IC = 50mA
VCB = 10V, f = 1MHz
NTE2529
Collector–Emitter Saturation Voltage
NTE2528
NTE2529
VCE(sat)
IC = 500mA, IB = 50mA
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
100 – 400
80 – –
– 120 – MHz
– 12 – pF
– 22 – pF
– 0.13 0.5 V
– 0.2 0.45 V



NTE2528
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
TurnOn Time
Storage Time
NTE2528
NTE2529
VBE(sat) IC = 500mA, IB = 50mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
ton VCC = 100V, VBE = 5V,
tstg
10IB1 = 10IB2 = IC = 700mA,
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
180
160
6
0.85
60
1.2
0.7
1.2
V
V
V
V
ns
ns
ns
Fall Time
NTE2528
tf
80 ns
NTE2529
50 ns
Note 1. For NTE2529, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
.275
(7.0)
BCE
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)