Circuit NMOS. NTE2532 Datasheet

NTE2532 NMOS. Datasheet pdf. Equivalent

Part NTE2532
Description Integrated Circuit NMOS
Feature NTE2532 Integrated Circuit NMOS, 32K EPROM, 300ns Description: The NTE2532 is a 32,768–bit, ultravio.
Manufacture NTE
Datasheet
Download NTE2532 Datasheet




NTE2532
NTE2532
Integrated Circuit
NMOS, 32K EPROM, 300ns
Description:
The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only
memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate
technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including
program data inputs) can be directly driven by Series 74 TTL circuits without the use of external pull–
up reistors, and each output can drive one Series 74 circuit without external resistors. The data out-
puts are three–state for connecting mutiple devices to a common bus.
Since the NTE2532 operates from a single +5V supply (in the read mode), it is ideal for use in micro-
processor systems. One other (+25V) supply is needed for programming but all programming signals
are TTL level, requiring a single 10ms pulse. For programming outside of the system, existing
EPROM programmers can be used. Locations may be programmed singly, in blocks, or at random.
Total programming time for all bits is 41 seconds.
Features:
D Organization: 4096 x 8
D Single +5V Power Supply
D All Inputs/Outputs Fully TTL Compatible
D Static Operation (No Clocks, No Refresh)
D Max Acces/Min Cycle Time: 300ns
D 8–Bit Output for Use in Microprocessor Based Systems
D N–Channel Silicon–Gate Technology
D 3–State Output Buffers
D Low Power Dissipation:
Active – 400mW Typical
Standby – 100mW Standby
D Guaranteed DC Noise Immunity with Standard TTL Loads
D No Pull–Up Resistors Required
Absolute Maximum Ratings: (TA = 0° to +70°C, Note 1 unless otherwise specified)
Supply Voltage (Note 2), VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +7V
Supply Voltage (Note 2), VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +28V
All Input Voltages (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +7V
Output Voltage (Operating, with Respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to 7V
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and functional operation of the device at these
or any other conditions beyond those indicated in the “Recommended Operation Conditions”
section of this specification is not implied. Exposure to absolute–maximum–rated conditions
for extended periods may affect device reliability.
Note 2. Under absolute maximum ratings, voltage values are with respect to the most negative supply
voltage, VS (substrate).



NTE2532
Recommended Operating Conditions:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Supply Voltage
High Level Input Voltage
Low Level Input Voltage
Read Cycle Time
Operating Ambient Temperature
VCC
VPP
VSS
VIH
VIL
tc(rd)
TA
Note 3
Note 4
4.75 5.0 5.25 V
VCC
0
V
V
2 VCC+1 V
0.1 +0.8 V
300
ns
0 70 °C
Note 3. VCC must be applied before or at the same time as VPP and removed after or at the same
time as VPP. The device must not be inserted into or removed from the board when VPP is
applied.
Note 4. VPP can be connected to VCC directly (except in the programming mode). VCC supply current
in this case would be ICC + IPP. During programming, VPP must be maintained at 25V (±1V).
Electrical Characteristics: (Over full range of recommended operating conditions)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
High Level Output Voltage
Low Level Output Voltage
Input Current (Leakage)
Output Current (Leakage)
VPP Supply Current
VPP Supply Current (During Program Pulse)
VCC Supply Current (Standby)
VCC Supply Current (Active)
VOH IOH = 400µA
2.4
VOL IOL = 2.1mA
Il VI = 0V to 5.25V
IO VO = 0.4V to 5.25V
IPP1 VPP = 5.25V, PD/PGM = VIL
IPP2 PD/PGM = VIL
ICC1 PD/PGM = VIH
ICC2 PD/PGM = VIL
––V
0.45 V
±10 µA
±10 µA
12 mA
30 mA
20 30 mA
80 160 mA
Capacitance: (Over recommended voltage and operating ambient temperature range, f = 1MHz,
Note 5, Note 6)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Ci VI = 0V, f = 1MHz
4 6 pF
Output Capacitance
Co VO = 0V, f = 1MHz
8 12 pF
Note 5. All typical values are at TA = +25°C and nominal voltages.
Note 6. Capacitance measurements are made on a sample basis only.
Switching Characteristics: (Over full range of recommended operating conditions, Note 5, Note 8)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Access Time from Address
Access Time from PD/PGM
Output Data Valid after Address Change
Output Disable Time from PD/PGM (Note 7)
ta(A)
ta(PR)
tv(A)
tdis
CL = 100pF,
1 Series 74 TTL Load,
tr 20ns, tf 20ns,
Note 8, Note 9
– – 300 ns
– – 300 ns
0 – – ns
– – 100 ns
Note 5. All typical values are at TA = +25°C and nominal voltages.
Note 7. Value calculated from 0.5V delta to measured output level
Note 8. Timing measurement reference levels: inputs 0.8V and 2V, outputs 0.65V and 2.2V.
Note 9. Common test conditions apply for tdis except during programming. For ta(A) and tdis,
PD/PGM = VIL.







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