Complementary Transistors. NTE2534 Datasheet

NTE2534 Transistors. Datasheet pdf. Equivalent

Part NTE2534
Description Silicon Complementary Transistors
Feature NTE2534 (NPN) & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low .
Manufacture NTE
Datasheet
Download NTE2534 Datasheet




NTE2534
NTE2534 (NPN) & NTE2535 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
Applications:
D Relay Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
NTE2534
NTE2535
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB = 80V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 6A
VCE = 5V, IC = 1A
IC = 6A, IB = 600mA
Min Typ Max Unit
– – 0.1 mA
– – 0.1 mA
100 – 280
30 – –
– 20 – MHz
– – 0.5 V
– – 0.4 V



NTE2534
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
90 – – V
CollectorEmitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE =
80 – – V
EmitterBase Breakdown Voltage
TurnOn Time
Storage Time
NTE2534
NTE2535
V(BR)EBO IE = 1mA, IC = 0
ton VCC = 50V,
10IB1 = 10IB2 = IC = 5A,
tstg
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
6 – –V
0.2 µs
0.7 µs
1.7 µs
Fall Time
NTE2534
NTE2535
tf
0.1 µs
0.2 µs
Note 1. For NTE2535, the polarity is reversed.
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
B C/ E
Case
.215 (5.47)







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