NPN Transistor. NTE2540 Datasheet

NTE2540 Transistor. Datasheet pdf. Equivalent

Part NTE2540
Description Silicon NPN Transistor
Feature NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE.
Manufacture NTE
Datasheet
Download NTE2540 Datasheet



NTE2540
NTE2540
Silicon NPN Transistor
Darlington, High Voltage Switch
Features:
D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A)
D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Emitter–Collector Forward Voltage
Collector Output Capacitance
Turn–On Time
Storage Time
Fall Time
ICBO VCB = 600V, IE = 0
– – 0.5 mA
IEBO VEB = 5V, IC = 0
– – 3 mA
V(BR)CEO IC = 10mA, IB = 0
400 – – V
hFE VCE = 2V, IC = 2A
600 – –
VCE = 2V, IC = 4A
100 – –
VCE(sat) IC = 4A, IB = 40mA
– – 2.0 V
VBE(sat) IC = 4A, IB = 40mA
– – 2.5 V
VECF IE = 4A, IB = 0
– – 3.0 V
Cob VCB = 50V, IE = 0, f = 1MHz – 35 – pF
ton VCC = 100V,
tstg
IB1 = –IB2 = 40mA,
Duty Cycle 1%
tf
– 1 – µs
– 8 – µs
– 5 – µs



NTE2540
Darlington Internal Schematic
C
B
E
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.531
(13.5)
Min
.122 (3.1)
Dia
.165
(4.2)
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max







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