NPN Transistor. NTE255 Datasheet

NTE255 Transistor. Datasheet pdf. Equivalent

Part NTE255
Description Silicon NPN Transistor
Feature NTE255 Silicon NPN Transistor Horizontal Driver, Amp Absolute Maximum Ratings: Collector–Base Voltag.
Manufacture NTE
Datasheet
Download NTE255 Datasheet




NTE255
NTE255
Silicon NPN Transistor
Horizontal Driver, Amp
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Power Dissipation (TA = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
Power Dissipation (TCOLLECTOR LEAD = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Maximum Operating Junction Temperature, TJmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Thermal Resistance, Junction–to–Case (TCOLLECTOR LEAD = +25°C), RthJC . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Ambient (TA = +25°C), RthJA . . . . . . . . . . . . . . . . . . . . . . 147°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 300V
– – 1.0 µA
DC Current Gain
hFE IC = 50mA, VCE = 10V, Note 1 25 –
IC = 100mA, VCE = 10V, Note 1 30 – –
IC = 250mA, VCE = 10V, Note 1 15 – –
IC = 500mA, VCE = 10V, Note 1 10 – 50
Collector–Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA, Note 1 – 0.2 0.5 V
Base–Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 100mA, Note 1 – 0.9 1.2 V
Transition Frequency
fT IC = 50mA
30 – 300 MHz
Output Capacitance
Cob VCB = 10V, f = 1MHz
– – 15 pF
Input Capacitance
Cib VBE = 0.5V, f = 1MHz
– – 125 pF
Note 1. Pulse Test: Pulse Width = 300µs.



NTE255
.200 (5.08)
.180 (4.57)
.100 (2.54)
EBC
.180
(4.57)
.594
(15.09)
.018 (0.46)
.050 (1.27)
.015 (0.38)
3.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R







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