Complementary Transistors. NTE2551 Datasheet

NTE2551 Transistors. Datasheet pdf. Equivalent

Part NTE2551
Description Silicon Complementary Transistors
Feature NTE2551 (NPN) & NTE2552 (PNP) Silicon Complementary Transistors Darlington Driver, Switch Features: .
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Datasheet
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NTE2551
NTE2551 (NPN) & NTE2552 (PNP)
Silicon Complementary Transistors
Darlington Driver, Switch
Features:
D High DC Current Gain
D Low Saturation Voltage
D High Current Capacity and Wide ASO
D Isolated TO220 Type Package
Applications:
D Motor Drivers
D Printer Hammer Drivers
D Relay Drivers
D Voltage Regulator Control
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
ICBO
IEBO
hFE (1)
VCB = 40V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 5A
Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
VCE = 5V, IC = 5A
IC = 5A, IB = 10mA
IC = 5A, IB = 10mA
IC = 5mA, IE = 0
IC = 50mA, RBE =
Min Typ Max Unit
– – 0.1 mA
– – 3.0 mA
2000 500 –
0
– 20 – MHz
– 0.9 1.5 V
– – 2.0 V
70 – – V
60 – – V



NTE2551
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Switching Characteristics
TurnOn Time
NTE2551
NTE2552
Storage Time
NTE2551
NTE2552
ton VCC = 20V, IC = 5A,
IB1 = IB2 = 500mA,
Pulse Width = 50µs
Duty Cycle 1%
tstg
0.6 µs
0.5 µs
3.0 µs
1.5 µs
Fall Time
NTE2551
NTE2552
tf
1.8 µs
1.7 µs
NTE2551
(NPN)
C
B
.402 (10.2) Max
.224 (5.7) Max
E
.295
(7.5)
.669
(17.0)
Max
.173 (4.4)
Max
.122 (3.1)
Dia
.165
(4.2)
.114
(2.9)
Max
NTE2552
(PNP)
.531
(13.5)
Min
BCE
C
B
.100 (2.54)
.059
(1.5)
Max
E
NOTE: Tab is isolated







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