NPN Transistor. NTE2553 Datasheet

NTE2553 Transistor. Datasheet pdf. Equivalent

Part NTE2553
Description Silicon NPN Transistor
Feature NTE2553 Silicon NPN Transistor Darlington, Motor Driver, Switch Features: D High DC Current Gain D H.
Manufacture NTE
Datasheet
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NTE2553
NTE2553
Silicon NPN Transistor
Darlington, Motor Driver, Switch
Features:
D High DC Current Gain
D High Breakdown Voltage
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cut–Off Current
ICBO VCB = 300V, IE = 0
Emitter Cut–Off Current
IEBO VEB = 6V, IC = 0
Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 250mA, L 40mH
DC Current Gain
hFE VCE = 2V, IC = 5A
VCE = 2V, IC = 10A
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 100mA
Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 100mA
Emitter–Collector Forward Voltage VECF IE = 10A, IB = 0
Transition Frequency
fT VCE = 2V, IC = 1A
Collector Output Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz
Turn–On Time
Storage Time
ton VCC = 100V,
tstg IB1 = –IB2 = 100mA
Fall Time
tf
Min Typ Max Unit
– – 100 µA
50 – 150 mA
300 – – V
200 – – V
500 – 5000
100 – –
– – 2.0 V
– – 2.3 V
– 1.5 2.0 V
– 40 – MHz
– 200 – pF
– – 1.0 µs
– – 12 µs
– – 2.0 µs



NTE2553
C
B
E
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.173 (4.4)
Max
.122 (3.1)
Dia
.165
(4.2)
BCE
.531
(13.5)
Min
.114
(2.9)
Max
.100 (2.54)
.059
(1.5)
Max
NOTE: Tab is isolated







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