NPN Transistor. NTE2556 Datasheet

NTE2556 Transistor. Datasheet pdf. Equivalent

Part NTE2556
Description Silicon NPN Transistor
Feature NTE2556 Silicon NPN Transistor Darlington, Motor/Relay Driver Features: D High DC Current Gain D Hig.
Manufacture NTE
Datasheet
Download NTE2556 Datasheet




NTE2556
NTE2556
Silicon NPN Transistor
Darlington, Motor/Relay Driver
Features:
D High DC Current Gain
D High Current Capacity
D Wide ASO Range
Applications:
D Motor Drivers
D Printer Hammer Drivers
D Relay Drivers
D Voltage Regulator Control
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector Emitter Saturation Volt-
age
ICBO
IEBO
hFE
fT
VCE(sat)
VCB = 80V, IE = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 4A
VCE = 5V, IC = 4A
IC = 4A, IB = 8mA
Base Emitter Saturation Voltage
VBE(sat) IC = 4A, IB = 8mA
Min Typ Max Unit
– – 0.1 mA
– – 3.0 mA
1500 4000 –
– 20 – MHz
– 0.9 1.5 V
– – 2.0 V



NTE2556
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
TurnOn Time
Storage Time
Fall Time
V(BR)CBO IC = 5mA, IE = 0
V(BR)CEO IC = 50mA, RBE =
ton VCC = 50V, VBE = 5V,
tstg
500IB1 = 500IB2 = IC = 4A,
Pulse Width = 50µs,
tf Duty Cycle 1%
110 – – V
100 – – V
0.6 µs
4.8 µs
1.6 µs
.402 (10.2)
.035
(0.9)
.177 (4.5)
.051 (1.3)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.019 (0.5)
NPN
C
B
E







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