NPN Transistor. NTE2557 Datasheet

NTE2557 Transistor. Datasheet pdf. Equivalent

Part NTE2557
Description Silicon NPN Transistor
Feature NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: .
Manufacture NTE
Datasheet
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NTE2557
NTE2557
Silicon NPN Transistor
Darlington, High Voltage Switch, Power Amp
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Transistor Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Transistion Frequency
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Turn–On Time
Storage Time
Fall Time
ICBO
ICEO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
ton
tstg
tf
VCB = 200V
VCE = 200V
VEB = 7V
VCE = 3V, IC = 10A
VCE = 10V, IC = 1.5A
IC = 10A, IB = 30mA
IC = 10A, IB = 30mA
IB1 = IB2 = 30mA,
IC = 10A, RL = 3,
VBB2 = 4V
Min Typ Max Unit
– – 0.1 mA
– – 0.1 mA
– – 5.0 mA
1500 – 30000
– 20 – MHz
– – 1.5 V
– – 2.0 V
––
2 µs
––
8 µs
––
5 µs



NTE2557
NPN
C
B
E
.217
(5.5)
.626 (15.9)
Max
.143
(3.65)
Dia
Max
B CE
.197 (5.0)
.787
(20.0)
.157
(4.0)
.559
(14.2)
Min
See
Note
.215 (5.45)
.047 (1.2)
.094 (2.4)
Note: Pin2 connected to metal part of
mounting surface.







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