NPN Transistor. NTE256 Datasheet

NTE256 Transistor. Datasheet pdf. Equivalent

Part NTE256
Description Silicon NPN Transistor
Feature NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxi.
Manufacture NTE
Datasheet
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NTE256
NTE256
Silicon NPN Transistor
Darlington w/Damper Diode
Description:
The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an
integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
stage in high power, fast switching applications.
Absolute Maximum Ratings:
Collector–Base Voltagte (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Peak (tp = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Power Dissipation (TC +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 175°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
ICEO
ICEV
VCEO = 400V, IB = 0
VCE = 600V, VBE = 1.5V, Note 1
VCE = 600V, VBE = 1.5V, TC = +100°C,
Note 1
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
IEBO
VCEO(sus)
VCE(sat)
VEB = 2V, IC = 0, Note 1
IC = 100mA, Note 1
IC = 10A, IB = 0.5A
IC = 18A, IB = 1.8A
IC = 22A, IB = 2.2A
IC = 28A, IB = 5.6A
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
Min Typ Max Unit
– – 1 mA
– – 100 µA
– – 2 mA
– – 175 mA
400 – – V
– – 2.0 V
– – 2.5 V
– – 3.0 V
– – 5.0 V



NTE256
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Resistive Switching Times
VBE(sat)
hFE
VF
IC = 10A, IB = 0.5A, Note 1
IC = 18A, IB = 1.8A, Note 1
IC = 22A, IB = 2.2A, Note 1
VCE = 5V, IC = 10A
VCE = 5V, IC = 18A
IF = 22A
– – 2.5 V
– – 3.0 V
– – 3.3 V
30
20
––4V
TurnOn Time
Storage Time
Fall Time
Inductive Switching Times
ton VCC = 250V, IC = 10A, IB1 = 0.5A,
ts VBE(off) = 5V
tf
0.35 0.6 µs
0.8 1.5 µs
0.25 0.6 µs
Storage Time
Fall Time
Storage Time
Fall Time
ts VClamp = 250V, IC = 10A, IB1 = 0.5A, 0.8 1.5 µs
tf VBE(off) = 5V
0.08 0.5 µs
ts VClamp = 250V, IC = 20A, IB1 = 2A,
tf VBE(off) = 5V
0.8 1.5 µs
0.35 0.7 µs
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
C
B
E
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners







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