Complementary Transistors. NTE2562 Datasheet

NTE2562 Transistors. Datasheet pdf. Equivalent

Part NTE2562
Description Silicon Complementary Transistors
Feature NTE2562 (NPN) & NTE2563 (PNP) Silicon Complementary Transistors High Current Switch Description: The.
Manufacture NTE
Datasheet
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NTE2562
NTE2562 (NPN) & NTE2563 (PNP)
Silicon Complementary Transistors
High Current Switch
Description:
The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type
package designed for use as a high current switch. Typical application include relay drivers, high–
speed inverters, converters, etc.
Features:
D Low Collector–Emitter Saturation Voltage
D High Current Capacity
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 6A
VCE = 5V, IC = 1A
Min Typ Max Unit
– – 0.1 mA
– – 0.1 mA
100 – 200
30 –
– 120 – MHz



NTE2562
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
NTE2562
VCE(sat) IC = 5A, IB = 0.25A
– – 0.4 V
NTE2563
– – 0.5 V
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
60 – – V
30 – – V
6––V
TurnOn Time
NTE2562
NTE2563
Storage Time
NTE2562
NTE2563
ton VCC = 10V, VBE = 5V,
10IB1 = 10IB2 = IC = 5A,
Pulse Width = 20µs,
Duty Cycle = 1%
tstg
0.2
0.1
0.5
0.3
µs
µs
µs
µs
Fall Time
tf
0.03 µs
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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