NPN Transistor. NTE2572 Datasheet

NTE2572 Transistor. Datasheet pdf. Equivalent

Part NTE2572
Description Silicon NPN Transistor
Feature NTE2572 Silicon NPN Transistor High Current Switch Features: D Low Collector Emitter Saturation Volt.
Manufacture NTE
Datasheet
Download NTE2572 Datasheet




NTE2572
NTE2572
Silicon NPN Transistor
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Current Capacity
Applications:
D Relay Drivers
D High Speed Inverters
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector Emitter Saturation Volt-
age
ICBO
IEBO
hFE
fT
VCE(sat)
VCB = 80V, IE = 0
VEB = 4V, IC = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 4A
VCE = 5V, IC = 4A
IC = 4A, IB = 400mA
Min Typ Max Unit
– – 0.1 mA
– – 0.1 mA
100 – 280
30 – –
– 20 – MHz
– – 0.4 V



NTE2572
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
TurnOn Time
Storage Time
Fall Time
V(BR)CBO IC = 1mA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
ton VCC = 30V, VBE = 5V,
tstg
10IB1 = 10IB2 = IC = 2A,
Pulse Width = 20µs,
tf Duty Cycle 1%
90 – – V
80 – – V
6––V
0.1 µs
1.6 µs
0.4 µs
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)







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