NPN Transistor. NTE2578 Datasheet

NTE2578 Transistor. Datasheet pdf. Equivalent

Part NTE2578
Description Silicon NPN Transistor
Feature NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output Features: D Excellent Fall Time Permi.
Manufacture NTE
Datasheet
Download NTE2578 Datasheet




NTE2578
NTE2578
Silicon NPN Transistor
TV Horizontal Deflection Output
Features:
D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 40V, IE = 0
– – 0.1 mA
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
– – 0.1 mA
DC Current Gain
hFE VCE = 5V, IC = 1A
30 – 60
VCE = 5V, IC = 4A
25 – –
Gain Bandwidth Product
fT VCE = 5V, IC = 1A
– 10 – MHz
Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 400mA
– 0.5 1.0 V
Base–Emitter Saturation Voltage
VBE(sat) IC = 4A, IB = 400mA
– – 1.5 V
Collector–Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0
200 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =
60 – – V
Emitter–Base Breakdown Voltage
V(BR)EBO IC = 5mA, IC = 0
6––V
Fall Time
tf VCC = 50V, VBB = 5V,
– 0.2 0.5 µs
IC = 5A, IB1 = –IB2 = 500mA,
PW = 20µs, Duty Cycle
2.5%



NTE2578
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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