NPN Transistor. NTE2579 Datasheet

NTE2579 Transistor. Datasheet pdf. Equivalent

Part NTE2579
Description Silicon NPN Transistor
Feature NTE2579 Silicon NPN Transistor High Voltage, High Speed Switch Features: D Fast Switching Speed D Lo.
Manufacture NTE
Datasheet
Download NTE2579 Datasheet



NTE2579
NTE2579
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D Fast Switching Speed
D Low Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Rqange, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Fall Time
ICBO VCB = 250V, IE = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 1V, IC = 1A
VCE = 1V, IC = 5A
fT VCE = 10V, IC = 500mA
VCE(sat) IC = 5A, IB = 500mA
VBE(sat) IC = 5A, IB = 500mA
V(BR)CBO IC = 1A, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
tf VCC = 50V, IC = 5A,
IB1 = –IB2 = 500mA,
Pulse Width = 20µs,
Duty Cycle 1%
Min Typ Max Unit
– – 100 µA
– – 100 µA
15 – –
10 – 50
10 40 – MHz
– – 0.8 V
– – 1.5 V
400 – – V
200 – – V
6––V
– – 0.3 µs



NTE2579
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)