NPN Transistor. NTE2580 Datasheet

NTE2580 Transistor. Datasheet pdf. Equivalent

Part NTE2580
Description Silicon NPN Transistor
Feature NTE2580 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage,.
Manufacture NTE
Datasheet
Download NTE2580 Datasheet



NTE2580
NTE2580
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulsed Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB = 400V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 800mA
VCE = 5V, IC = 4A
VCE = 5V, IC = 10mA
VCE = 10V, IC = 800mA
VCB = 10V, f = 1MHz
IC = 4A, IB = 800mA
Min Typ Max Unit
– – 10 µA
– – 10 µA
20 – 50
10 – –
10 – –
– 20 – MHz
– 80 – pF
– – 0.8 V



NTE2580
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base Emitter Saturation Voltage
VBE(sat) IC = 4A, IB = 800mA
– – 1.5 V
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
500 – – V
Collector Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =
400 – – V
Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
7––V
Collector Emitter Sustaining Voltage VCEX(sus) IC = 3A, IB1 = 0.3A, L = 1mH, 400 – – V
IB2 = 1.2A, Clamped
TurnOn Time
Storage Time
Fall Time
ton VCC = 200V, IC = 5A,
tstg
IB1 = 1A, IB2 = 2A,
RL = 40
tf
0.5 µs
2.5 µs
0.3 µs
.402 (10.2)
.035
(0.9)
BC E
.346
(8.8)
.433
(11.0)
.100 (2.54)
.177 (4.5)
.051 (1.3)
.019 (0.5)







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